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China-based industrial OEM supplier supporting customization, quality control, and global delivery.

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Include process, product type, drawing status, purity/coating target, dimensions, quantity forecast, operating conditions, and delivery date.

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Best for quick drawing checks, process fit questions, and RFQ clarification.

Products
  • SiC Crystal Growth Crucible
  • High-Purity Graphite Heater
  • Graphite Hot Zone
  • Rigid Carbon Felt Insulation
  • CVD SiC Coated Susceptor
  • SiC Coated Wafer Carrier
  • SiC Coated Dummy Wafer
  • C/C Composite Fasteners
  • C/C Composite Trays
  • Vacuum Pump Graphite Vanes
  • Aluminum Degassing Graphite Rotor
  • TaC Coated Graphite Crucible
  • Tantalum Carbide Guide Ring
  • TaC Coated Susceptor
Solutions
  • SiC PVT Crystal Growth
  • MOCVD & Epitaxy
  • Semiconductor Thermal Field
  • Vacuum Furnace Hot Zone
  • High-Temperature Carbon Composites
  • Industrial Graphite Replacement
OEM Capabilities
  • High-Purity Graphite Machining
  • CVD SiC Coating
  • C/C Composite Fabrication
  • Purity and Ash Control
  • Drawing-Based Custom Parts
  • Inspection and Export Packaging
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© 2026 SiC Graphite. All Rights Reserved.|Supply chain combines Liaoyang Xingde graphite thermal-field manufacturing with Qingdao Chijiu CVD SiC coating and C/C composite capabilities.
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SiC Crystal Growth Crucible

Ultra-high purity graphite crucibles designed specifically for SiC PVT crystal growth. Engineered for low ash targets, including <10 ppm programs where specified, to reduce contamination risk during 2000°C+ operations.

Target Buyer:Procurement teams at SiC wafer and boule manufacturing facilities.
High-purity graphite crucible for SiC PVT crystal growth 1

Capability Highlights

  • Ultra-low ash targets for reduced metal contamination risk
  • Consistent thermal conductivity across batches
  • Precision CNC machining for controlled sealing interfaces

Typical Applications

  • SiC PVT Crystal Growth
  • High-temperature Semiconductor Sublimation

Engineering Focus

  • Purity certification verification
  • Thermal gradient stability
  • Mechanical strength under thermal shock

Key Evaluation Matrix

MetricTypical RangeWhy It Matters
Ash Content< 5-10 ppmDirectly impacts crystal defect density.
Bulk Density1.80 - 1.92 g/cm3 by gradeHigher density reduces open porosity and vapor penetration during SiC PVT growth.
Trace Metal ControlsBuyer-defined Fe, V, Ti, Al limitsTrace metals can enter the boule or wafer process if purification limits are vague.
Critical InterfacesDrawing-defined OD, ID, thread, lid, and seal tolerancesFit errors change thermal gradients and can shorten the replacement cycle.
Engineering Datasheet

Product-Level Technical Specifications

Values below are RFQ planning targets, not blanket guarantees. Final acceptance criteria should be frozen against drawings, process conditions, equipment model, and buyer qualification requirements.

ParameterTarget / Typical ScopeEngineering Note
Base materialUltra-high-purity isostatic graphite selected by ash target, density, grain size, and thermal conductivityPVT crucibles should not be quoted from geometry alone; graphite route controls contamination, strength, and thermal behavior.
Purity routePost-machining purification aligned to buyer ash and restricted-element requirementsPurification after machining reduces the risk of tool, handling, and process contamination entering the growth zone.
Operating temperature2000C+ SiC PVT review by source chemistry, atmosphere, growth cycle, and thermal gradientTemperature alone is incomplete; vapor exposure, cycle count, and source-to-seed geometry affect crucible life.
Fit-critical geometryOD, ID, height, wall thickness, lip, lid seat, groove, thread, and bottom radius by drawingSmall deviations can affect sealing, source loading, thermal gradient, and assembly clearance.
Surface finishBuyer-defined machined or polished surface condition for source-contact and sealing areasSurface condition affects powder handling, vapor interaction, cleaning, and inspection acceptance.
Packing boundaryClean bagging, separators, impact protection, and crate support for fragile crucible featuresA high-purity crucible can lose qualification value if contact surfaces are abraded or contaminated in transit.

Trace Impurity Review Table

Semiconductor programs should define restricted elements before sample production. The table helps procurement and process teams turn purity expectations into a measurable qualification file.

ElementTypical LimitWhy Controlled
Total ash<5-10 ppm class by buyer acceptance plan where specifiedAsh content is a direct qualification item for SiC crystal-growth consumables.
Fe / Ni / CrRestricted by buyer trace-metal tableTransition metals are commonly controlled to reduce crystal contamination and defect risk.
B / V / TiDefined by SiC growth sensitivityRelevant for dopant background, micropipe risk review, and buyer-side traceability files.
Na / Ca / MgProject-specific limit or report-only scope by process needAlkali and alkaline-earth elements can be included in buyer COA templates for clean hot-zone parts.

RFQ Evidence Package

These records reduce ambiguity before sample approval and repeat-order release.

  1. Crucible drawing with OD, ID, height, wall thickness, lip, lid seat, groove, thread, radius, and datum references.
  2. Purity requirement or restricted-element table tied to buyer acceptance criteria.
  3. Material route showing graphite grade, purification sequence, and inspection scope.
  4. CTQ dimensional report for fit-critical sealing, source-contact, and assembly interfaces.
  5. Clean packing photos showing separators, bagging, feature protection, and crate orientation.

Equipment Compatibility Review

Compatibility should be treated as an engineering review, not a catalog claim. Equipment-family language helps buyers route the RFQ, while final production still depends on drawings, samples, coating allowance, and acceptance criteria.

Equipment FamilyCompatible Part ScopeBuyer Validation Required
SiC PVT crystal-growth furnacesPurified graphite source crucibles, lids, rings, liners, and mating hot-zone graphite hardware.Confirm boule diameter, crucible drawing, source loading, growth temperature, ash target, and current failure mode.
High-temperature sublimation systemsGraphite crucibles and sublimation containers for contamination-sensitive 2000C+ material processing.Confirm atmosphere, vapor chemistry, lid or thread interface, thermal cycle, and trace-element report scope.
TaC upgrade programsGraphite crucible substrates prepared for TaC coating feasibility review or hybrid graphite / TaC hot-zone layouts.Confirm coated and uncoated surfaces, coating thickness target, post-coating dimensions, and sample qualification path.
Open full OEM compatibility matrix

Product Selection Logic

Decision FactorSelection LogicBuyer Check
Purity boundaryUse purified graphite when the part is exposed to SiC source vapor, seed-zone gradients, or high-temperature sublimation.Request ash and trace-metal limits, especially Fe, V, Ti, Al, and Ca.
Thermal geometryPrioritize drawing fit, lid interfaces, ring gaps, and wall thickness over generic crucible dimensions.Send OD, ID, height, thread, groove, and mating-part drawings together.
Replacement cycleChoose grade and purification route around the real number of growth runs expected per part.Share current cracking, erosion, or contamination failure photos if available.

Manufacturing and QC Flow

StageProduction / QC CheckpointBuyer Evidence
1. Requirement freezeConfirm furnace type, growth temperature, crucible interfaces, and purity target.RFQ sheet with CAD, material grade, ash limit, and replacement-cycle goal.
2. Graphite selectionMatch isostatic graphite density, grain size, and purification route to PVT risk.Grade proposal with density, grain-size class, and ash-control plan.
3. CNC machiningMachine sealing faces, grooves, threads, and assembly features from approved drawings.First-article dimensional report for CTQ features.
4. Purification and QAApply purification and verify trace-metal or ash acceptance criteria.COA or agreed trace-element report by lot.
5. Clean packingProtect machined graphite surfaces from dust, edge impact, and moisture.Packing photos, labels, and export documents before shipment.

RFQ Checklist

  1. Define required purity level (e.g., <10ppm ash)
  2. Provide exact crucible dimensions and thread tolerances
  3. Specify expected operating temperature
  4. Confirm monthly volume forecast

Risk Controls

  • Impurity outgassing at 2000°C: Rigorous purification cycles and ICP-MS testing.

Product Gallery

High-purity graphite crucible for SiC PVT crystal growth 2
High-purity graphite crucible for SiC PVT crystal growth 2
High-purity graphite crucible for SiC PVT crystal growth 3
High-purity graphite crucible for SiC PVT crystal growth 3
High-purity graphite crucible for SiC PVT crystal growth 4
High-purity graphite crucible for SiC PVT crystal growth 4
High-purity graphite crucible for SiC PVT crystal growth 5
High-purity graphite crucible for SiC PVT crystal growth 5
Precision graphite crucible for semiconductor hot zone use 1
Precision graphite crucible for semiconductor hot zone use 1
Precision graphite crucible for semiconductor hot zone use 2
Precision graphite crucible for semiconductor hot zone use 2
Precision graphite crucible for semiconductor hot zone use 3
Precision graphite crucible for semiconductor hot zone use 3

Buyer FAQ

What is your standard lead time for PVT crucibles?

Typically 4-6 weeks for initial batches, moving to VMI/stocking for mass production.

Which specifications matter most for SiC PVT graphite parts?

Start with ash and trace-metal limits, graphite density, grain-size class, CTQ dimensions, and the expected replacement cycle inside the PVT hot zone.

Should purification happen before or after machining?

For semiconductor hot-zone parts, purification is usually planned after machining so finished surfaces and complex features are included in the cleanliness route.

What should we send if the current crucible is failing early?

Send drawings, operating temperature, atmosphere, run count, failure photos, and any contamination data so the grade and purification route can be adjusted.

Related Resources

  • View OEM Capabilities
  • OEM Compatibility Matrix
  • Quality & Metrology
  • Contact / RFQ
  • Solution: SiC PVT Crystal Growth
  • OEM: Purity and Ash Control
  • Guide: Choosing High-Purity Graphite

Procurement Next Steps

  • Compare the full product portfolio before locking material architecture.
  • Match the part to a process solution for thermal-field and contamination constraints.
  • Review OEM capability controls for machining, coating, purification, and export packaging.
  • Send a drawing-based RFQ with process, material grade, tolerances, quantity, and delivery target.

Inquiry Email

[email protected]

Email app

Include process, product type, drawing status, purity/coating target, dimensions, quantity forecast, operating conditions, and delivery date.

Instant Chat

+8618857971991

Chat on WhatsApp

Best for quick drawing checks, process fit questions, and RFQ clarification.