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China-based industrial OEM supplier supporting customization, quality control, and global delivery.

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Include process, product type, drawing status, purity/coating target, dimensions, quantity forecast, operating conditions, and delivery date.

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Best for quick drawing checks, process fit questions, and RFQ clarification.

Products
  • SiC Crystal Growth Crucible
  • High-Purity Graphite Heater
  • Graphite Hot Zone
  • Rigid Carbon Felt Insulation
  • CVD SiC Coated Susceptor
  • SiC Coated Wafer Carrier
  • SiC Coated Dummy Wafer
  • C/C Composite Fasteners
  • C/C Composite Trays
  • Vacuum Pump Graphite Vanes
  • Aluminum Degassing Graphite Rotor
Solutions
  • SiC PVT Crystal Growth
  • MOCVD & Epitaxy
  • Semiconductor Thermal Field
  • Vacuum Furnace Hot Zone
  • High-Temperature Carbon Composites
  • Industrial Graphite Replacement
OEM Capabilities
  • High-Purity Graphite Machining
  • CVD SiC Coating
  • C/C Composite Fabrication
  • Purity and Ash Control
  • Drawing-Based Custom Parts
  • Inspection and Export Packaging
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© 2026 SiC Graphite. All Rights Reserved.|Supply chain combines Liaoyang Xingde graphite thermal-field manufacturing with Qingdao Chijiu CVD SiC coating and C/C composite capabilities.
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SiC Coated Wafer Carrier

SiC coated planetary wafer carriers for MOCVD systems. Precision-machined pockets ensure uniform wafer heating and gas flow dynamics for consistent epitaxial growth.

Target Buyer:Epi-foundry procurement and fab process teams.
SiC coated graphite wafer carrier for epitaxy reactors 1

Capability Highlights

  • Precise pocket dimensions
  • High-density SiC coating
  • Long service life in corrosive environments

Typical Applications

  • GaN/SiC Epitaxy
  • MOCVD Planetary Reactors

Engineering Focus

  • Pocket depth and flatness tolerance
  • Rotational balance
  • Coating integrity in pockets

Key Evaluation Matrix

MetricTypical RangeWhy It Matters
Pocket Flatness< 0.05 mmCritical for wafer temperature uniformity.
Coating UniformityThickness map or coupon check by projectThin edges or pockets become the first failure point in corrosive epitaxy gases.
Base Graphite MatchCTE and density matched to CVD SiC coatingPoor substrate matching drives coating cracks, peeling, and exposed graphite.
Surface FinishRa target specified for wafer pocket or sealing surfaceSurface finish affects wafer slip, particle risk, and thermal uniformity.

Product Selection Logic

Decision FactorSelection LogicBuyer Check
Corrosive process gasChoose CVD SiC coated graphite for MOCVD, epitaxy, HCl, NH3, or particle-sensitive wafer handling.Specify gas environment, wafer size, equipment model, and lifetime target.
Coating feasibilityDeep pockets, blind holes, sharp edges, and hidden surfaces may need DFM changes before coating.Ask for coating-thickness targets and note surfaces that must remain uncoated.
Substrate matchBase graphite must be chosen for CTE, density, and surface quality, not only machining cost.Confirm CTE matching logic and first-article visual/coating inspection scope.

Manufacturing and QC Flow

StageProduction / QC CheckpointBuyer Evidence
1. Coating DFMReview pockets, blind areas, edges, masked surfaces, and coating-thickness target.Marked drawing with coated, uncoated, and critical wafer-contact surfaces.
2. Substrate machiningMachine graphite substrate with CTE, density, and surface preparation matched to CVD SiC.Base material selection note and pre-coating inspection record.
3. CVD SiC coatingDeposit dense SiC coating with attention to pockets, edges, and thermal-stress risk.Coating thickness target and inspection method agreed before production.
4. Final inspectionCheck visible defects, coating continuity, dimensions, and wafer-contact surfaces.Inspection report, photos, or coupon result depending on order scope.
5. Clean export packingProtect polished or coated surfaces from abrasion, fingerprints, and impact.Individual wrapping, separators, and packing photos.

RFQ Checklist

  1. Specify wafer size (e.g., 6-inch, 8-inch)
  2. Provide pocket layout/drawing
  3. Specify target equipment

Risk Controls

  • Wafer slip/scratching: Optimized pocket profile and surface roughness control.

Product Gallery

Multi-pocket SiC coated graphite wafer carrier
Multi-pocket SiC coated graphite wafer carrier
MOCVD graphite tray with SiC coating for wafer support
MOCVD graphite tray with SiC coating for wafer support

Buyer FAQ

Can you manufacture carriers for 8-inch SiC epi?

Yes, we can review machining feasibility for large-diameter multi-pocket carriers based on drawings and tolerance requirements.

What is the most common cause of SiC coating failure?

Early failure usually comes from substrate mismatch, coating shadow areas, sharp edges, or thermal cycling that creates cracks and exposes the graphite base.

Do all surfaces need the same SiC coating thickness?

No. Wafer-contact areas, gas-facing surfaces, edges, and masked interfaces should be marked on the drawing before the CVD coating route is finalized.

What evidence should a buyer request for coated parts?

Ask for agreed coating-thickness checks, visual defect inspection, critical dimensional checks after coating, and clean packing photos for sensitive surfaces.

Related Resources

  • Solutions: MOCVD Epitaxy
  • Contact / RFQ
  • OEM: CVD SiC Coating
  • Guide: CVD SiC vs Bare Graphite

Procurement Next Steps

  • Compare the full product portfolio before locking material architecture.
  • Match the part to a process solution for thermal-field and contamination constraints.
  • Review OEM capability controls for machining, coating, purification, and export packaging.
  • Send a drawing-based RFQ with process, material grade, tolerances, quantity, and delivery target.

Inquiry Email

[email protected]

Email app

Include process, product type, drawing status, purity/coating target, dimensions, quantity forecast, operating conditions, and delivery date.

Instant Chat

+8618857971991

Chat on WhatsApp

Best for quick drawing checks, process fit questions, and RFQ clarification.